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研究室紹介

宮地 幸祐

【現在の研究課題】高効率パワーマネージメント集積回路設計

【キーワード】集積回路、DC-DCコンバータ、非接触給電、エネルギーハーベスティング、三次元実装、新規デバイスを用いたアナログセンシングシステム・回路設計

【キーワード】電流センサー、容量センサー、アナログ回路設計

氏名 宮地 幸祐
所属部署名 学術研究院(工学系) 工学部主担当(電子情報システム工学科,旧:電気電子工学科)
職名 准教授
研究者総覧 SOARを見る

【出身大学院】
2008, 東京大学大学院,工学系研究科,電子工学専攻
2005, 東京大学大学院,工学系研究科,電子工学専攻

【出身学校・専攻等】(大学院を除く)
2003, 東京大学,工学部,電子工学科

【研究職歴】
2015-, 信州大学 工学部 電気電子工学科 准教授
2013-2015, 信州大学 工学部 電気電子工学科 助教
2012-2013, 中央大学 研究開発機構 専任研究員・機構助教
2010-2012, 東京大学 生産技術研究所 特任助教
2009-2010, 東京大学 生産技術研究所 特任研究員
2007-2008, 日本学術振興会 特別研究員(DC2)

【研究職歴以外の職歴】
2008-2009, 日本テキサス・インスツルメンツ

川崎淳, 志村和大, 佐藤光秀, 水野勉, 宮地幸祐, “10~20MHz動作12V-1.5W出力鉄系メタルコンポジット磁心材料を用いた絶縁コンバータ用絶縁トランスの検討,” 電子情報通信学会 集積回路研究専門委員会(ICD)LSIとシステムのワークショップ2022, 優秀ポスター賞(学生部門), May 2022.

樋口智大, 鈴木大, 石田涼, 一色保明, 宮地幸祐, “間欠動作型5.7GHz非接触給電に向けた昇降圧DC-DCコンバータの設計,” 電子情報通信学会 集積回路研究専門委員会(ICD)LSIとシステムのワークショップ2021, IEEE SSCS Kansai Chapter Academic Research Award, May 2021.

両角光一, 熊谷洸太, 谷村恭兵, 吉田裕志, 宮地幸祐, “10MHz動作48V入力1.8V-10A出力高降圧倍電流型LLC共振コンバータの検討,” 電子情報通信学会 集積回路研究専門委員会(ICD)LSIとシステムのワークショップ2021, IEEE SSCS Kansai Chapter Academic Research Award, May 2021.

Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, and Kousuke Miyaji, Asia and South Pacific Design Automation Conference (ASP-DAC) 2021, University LSI Design Contest, Special Feature Award, “A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver,” January 2021.

谷村恭兵, 金井素弘, 宮地幸祐, “高周波動作とリンギング抑制を両立したGaN FETゲートドライバの設計,” 電子情報通信学会 信越支部大会, 学生奨励賞, September 2020.

赤羽和哉, 髙木憲太郎, 塚田芳寿, 曽根原誠, 佐藤敏郎, 宮地幸祐, “光プローブ電流センサ向けCMOSアナログフロントエンド回路の完全差動化 によるDC測定の検討,” 電子情報通信学会 信越支部大会, 学生奨励賞, September 2019.

柄澤悠樹, 福岡孝将, 滝英俊, 宮地幸祐, “中間電圧生成チャージポンプ一体型AOOT 3値 Buck DC-DCコンバータ,” 電子情報通信学会 集積回路研究専門委員会(ICD)LSIとシステムのワークショップ2019, 優秀ポスター賞(学生部門), May 2019.

Kousuke Miyaji, Yuki Karasawa, and Takanobu Fukuoka, Asia and South Pacific Design Automation Conference (ASP-DAC) 2019, University LSI Design Contest, Best Design Award, “A Wide Conversion Ratio, 92.8% Efficiency, 3-Level Buck Converter with Adaptive On/Off-Time Control and Shared Charge Pump Intermediate Voltage Regulator,” January 2019.

高木憲太郎, 上倉宇晴, 小柳洸介, 曽根原誠, 佐藤敏郎, 宮地幸祐, “光プローブ電流センサ向け120dBΩ, 16MHz疑似差動CMOSアナログフロントエンド回路”, 電子情報通信学会 集積回路研究専門委員会(ICD)LSIとシステムのワークショップ, 優秀ポスター賞(学生部門), May 2018.

上倉宇晴, 小柳洸介, 曽根原誠, 佐藤敏郎, 宮地幸祐, “光プローブ電流センサ向け完全差動CMOSアナログフロントエンドの設計,” 電子情報通信学会 エレクトロニクスソサイエティ学生奨励賞 回路およびエレクトロニクス分野, September 2017.

【著書】
環境磁界発電-原理と設計法-科学情報出版株式会社 2016(Mar.)
Author:田代晋久、脇若弘之、佐藤敏郎、曽根原誠、水野勉、卜穎剛、宮地幸祐、中澤達夫、生稲弘明、笠井利幸

【学術論文】
Masayuki Naoe, Makoto Sonehara, Kousuke Miyaji, Toshiro Sato, Yasushi Endo, Sho Muroga, Nobukiyo Kobayashi, and Ken-Ichi Arai, “Crossed Anisotropy Multilayered Nanogranular Films Combining High Permeability, Ferromagnetic Resonance Frequency, and Resistivity,” IEEE Transactions on Magnetics, vol. 59, no. 11, 2300305, November 2023. (IF: 1.848)

Kazuya Nishijima, Toma Umeki, and Kousuke Miyaji, “A 24 V to 1 V integrated dual-charging path dual-inductor hybrid converter for improved step-up load transient response,” Japanese Journal of Applied Physics, vol. 62, pp. SC1047-1–SC1047-10, February 2023. (IF: 1.491)

Kousuke Miyaji, “Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter,” IEICE Transactions on Electronics, vol. E105-C, no. 10, 521–533, October 2022 [Invited Paper]. (IF: 0.477)

Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, and Kousuke Miyaji, “A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver,” IEICE Transactions on Electronics, IEICE Transactions on Electronics, vol. E103-C, no. 10, 472–479, October 2020. (IF: 0.477)

Tomoki Akiyama, Shu Ishida, Tomohiro Shirasawa, Takanobu Fukuoka, Shintaro Hara, Hiroshi Yoshida, Makoto Sonehara, Toshiro Sato, and Kousuke Miyaji, “Integrated CMOS Switch Buck DC-DC Converter Fabricated in Organic Interposer with Embedded Magnetic Core Inductor,” Journal of the Magnetics Society of Japan, vol. 43, no. 3, pp. 64–69, May 2019. (IF:不明, Impact Score: 0.73)

Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, and Koh Johguchi, “A compact perspiration meter system with capacitive humidity sensor for wearable health-care applications,” Japanese Journal of Applied Physics, vol. 57, no. 4S, p. 04FF10, March 2018. (IF: 1.491)

Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, and Kousuke Miyaji, “Pseudo-differential CMOS analog front-end circuit for wide-bandwidth optical probe current sensor,” Japanese Journal of Applied Physics, vol. 57, no. 4S, p. 04FF06, March 2018. (IF: 1.491)

Minori Yoshida, and Kousuke Miyaji, “A 190 mV start-up and 59.2% efficiency CMOS gate boosting voltage doubler charge pump in 0.18 um standard CMOS process for energy harvesting,” Japanese Journal of Applied Physics, vol. 57, no. 4S, p. 04FF02, February 2018. (IF: 1.491)

Toshihiro Tomita, and Kousuke Miyaji, “Number of traps and trap depth position on statistical distribution of random telegraph noise in scaled NAND flash memory,” Japanese Journal of Applied Physics, vol. 55, no. 4S, p. 04EE08, April 2016. (IF: 1.491)

Toshihiro Tomita, and Kousuke Miyaji, “Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory,” Japanese Journal of Applied Physics, vol. 54, no. 4S, p. 04DD02, April 2015. (IF: 1.491)

Koh Johguchi, Toru Egami, Kousuke Miyaji and Ken Takeuchi, “A Temperature tracking read reference current and write voltage generator for multi-level phase change memories” IEICE Transactions on Electronics, Vol. E97-C, No. 4, Apr. 2014. (IF: 0.477)

Kousuke Miyaji, Chao Sun, Ayumi Soga, and Ken Takeuchi, “Co-design of application software and NAND flash memory in solid-state drive for relational database storage system,” Japanese Journal of Applied Physics, vol. 53, no. 4S, p. 04EE09, April 2014. (IF: 1.491)

Shogo Hachiya, Koh Johguchi, Kousuke Miyaji and Ken Takeuchi, “Hybrid triple-level-cell /multi-level-cell NAND flash storage array with chip exchangeable method,” Japanese Journal of Applied Physics, vol. 53, no. 4S, p. 04EE04, April 2014. (IF: 1.491)

Chao Sun, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi, “A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD,” IEEE Transactions on Circuit and Systems I, vol. 61, no. 2, pp. 382–392, Feb 2014. (IF: 4.14)

Kousuke Miyaji, Yuki Yanagihara, Reo Hirasawa, Sheyang Ning and Ken Takeuchi, “Control gate length, spacing, channel hole diameter, and stacked layer number design for bit-cost scalable-type three-dimensional stackable NAND flash memory,” Japanese Journal of Applied Physics, vol. 53, no. 2, p. 024201, January 2014. (IF: 1.491)

Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano and Ken Takeuchi, “A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy,” IEEE Journal of Solid-State Circuits, vol. 48, no. 9, pp. 2239–2249, September 2013. (IF: 6.12)

Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano and Ken Takeuchi, “Near Threshold Voltage Word-line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM.”, IEEE Transactions on Circuit and Systems I, vol. 59, no. 8, pp. 1635–1643, August 2012. (IF: 1.491)

Kousuke Miyaji, Chinglin Hung and Ken Takeuchi, "Scaling Trends and Tradeoffs between Short Channel Effect and Channel Boosting Characteristics in sub-20nm Bulk/SOI NAND Flash Memory," Japanese Journal of Applied Physics, vol. 51, no. 4, p. 04DD12, April 2012. (IF: 1.491)

Kousuke Miyaji, Yasuhiro Shinozuka and Ken Takeuchi, "Zero Additional Process, Local Charge Trap, Embedded Flash Memory with Drain-side Assisted Erase Scheme Using Minimum Channel Length/Width Standard CMOS Single Transistor Cell," Japanese Journal of Applied Physics, vol. 51, no. 4, p. 04DD02, April 2012. (IF: 1.491)

Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi and Ken Takeuchi, "Endurance Enhancement and High Speed Set/Reset of 50nm Generation HfO2–based Resistive Random Access Memory (ReRAM) Cell by Intelligent Set/Reset Pulse Shape Optimization and Verify Scheme," Japanese Journal of Applied Physics, vol. 51, no. 2, p. 02BD07, April 2012. (IF: 1.491)

Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru, Shinji Miyano and Ken Takeuchi, "Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor," IEICE Transactions on Electronics, E95-C, no. 4, pp. 564–571, April 2012. (IF: 0.477)

Kousuke Miyaji, Ryoji Yajima, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, "Initialize & and Weak-Program Erasing Scheme and Single-Pulse Programming Scheme for High-Performance and High-Reliability Ferroelectric NAND Flash Solid-State Drive," IEICE Transactions on Electronics, E95-C, no. 4, pp. 609–616, April 2012. (IF: 0.477)

Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Shinji Miyano and Ken Takeuchi, "Improvement of Read Margin and its Distribution by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor Formed by Post-Process Local Electron Injection," IEEE Journal of Solid-State Circuits, vol. 46, no. 9, pp. 2180–2188, September 2011. (IF: 6.12)

Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, "A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD," Solid-State Electronics, Vol. 58, pp. 34–41, January 2011. (IF: 1.901)

Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima, Kousuke Miyaji, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, "A 0.5-V Six-Transistor Static Random Access Memory with Ferroelectric-Gate Field Effect Transistors," Japanese Journal of Applied Physics, Vol. 49, No. 12, p. 121501, December 2010. (IF: 1.491)

Shinji Noda, Teruyoshi Hatanaka, Kousuke Miyaji, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai and Ken Takeuchi, "A 1.2V Power Supply, 2.43 Times Power Efficient, Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories," Japanese Journal of Applied Physics, p. 04DD10, April 2010. (IF: 1.491)

Jeong YeonJoo, Kousuke Miyaji, Takuya Saraya and Toshiro Hiramoto, “Silicon nanowire n-type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain,” Journal of Applied Physics, vol. 105, no. 8, p. 084514, June 2009. (IF: 2.877)

Jiezhi Chen, Takura Saraya, Kousuke Miyaji, Ken Shimizu and Toshiro Hiramoto, "Electron Mobility in Silicon Gate-All-Around [100]- and [110]-Directed Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor on (100)-Oriented Silicon-on-Insulator Substrate Extracted by Improved Split Capacitance-Voltage Method", Japanese Journal of Applied Physics, Vol. 48, No. 1, p. 011205, January 2009. (IF: 1.491)

Masaharu Kobayashi, Kousuke Miyaji and Toshiro Hiramoto, "On the Origin of Negative Differential Conductance in Ultranarrow Wire Channel Silicon Single-Electron and Single-Hole Transistor," Japanese Journal of Applied Physics, vol. 47, no. 3, pp. 1813–1817, March 2008. (IF: 1.491)

Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi and Toshiro Hiramoto, "Extremely high flexibilities of Coulomb blockade and negative differential conductance oscillations in room-temperature-operating silicon single hole transistor," Applied Physics Letters, vol. 92, no. 7, p. 073502, February 2008. (IF: 3.791)

Kousuke Miyaji and Toshiro Hiramoto, “Control of full width at half maximum of Coulomb oscillation in silicon single-hole transistors at room temperature,” Applied Physics Letters, vol. 91, no. 5, p. 053509, August 2007. (IF: 3.791)

Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto, “Compact Analytical Model for Room-Temperature-Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels,” IEEE Transactions on Nanotechnology, vol. 5, no. 3, pp. 167–173, May 2006. (IF: 2.967)

Kousuke Miyaji, Masumi Saitoh and Toshiro Hiramoto, “Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors,” Applied Physics Letters, vol. 88, no. 14, p. 143505, April 2006. (IF: 3.791)

Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo and Toshiro Hiramoto, "Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs," Japanese Journal of Applied Physics, vol. 44, part 1, no. 4B, pp. 2371–2375, April 2005. (IF: 1.491)

【国際学会発表】
Kousuke Miyaji, Makoto Sonehara, and Toshiro Sato, “A Collaboration from High Frequency Soft Magnetic Materials to Integrated Circuit Design for beyond 10MHz Switching Power Supply,” IEEE International Magnetics Conference 2023 (INTERMAG2023), FA-06, May 2023.

Ryohei Miyata, Soichi Kimura, Nanami Kawada, Takatoshi Minamisawa, Makoto Sonehara, Kousuke Miyaji, and Toshiro Sato, “Fabrication of Planar Power Inductor for Beyond 10 MHz Using Fe-based Composite Magnetic Core,” IEEE International Magnetics Conference 2023 (INTERMAG2023), MPA-06, May 2023.

Masayuki Naoe, Makoto Sonehara, Kousuke Miyaji, Toshiro Sato, Yasushi Endo, Nobuyuki Kobayashi, and Ken-Ichi Arai, “Crossed Anisotropy Multilayered Nanogranular Films Combining High Permeability, Ferromagnetic Resonance Frequency, and Resistivity,” IEEE International Magnetics Conference 2023 (INTERMAG2023), VPB-14, May 2023.

Jun Kawasaki, Kazuhiro Shimura, Mizuki Muramatsu, Nanami Kawada, Mitsuhide Sato, Makoto Sonehara, Toshiro Sato, Tsutomu Mizuno, and Kousuke Miyaji, “A 289nH 20MHz Isolation Planar Power Transformer with Fe-based Metal Composite Magnetic Core,” International Symposium on Integrated Magnetics 2023 (iSIM 2023), p. 46, May 2023.

Mizuki Muramatsu, Jun Kawasaki, Kazuhiro Shimura, Nanami Kawada, Mitsuhide Sato, Makoto Sonehara, Toshiro Sato, Tsutomu Mizuno, and Kousuke Miyaji, “A Design Methodology for 30MHz Fe-based Metal Composite Core Isolation Power Transformer and LLC Resonant Converter,” International Symposium on Integrated Magnetics 2023 (iSIM 2023), p. 45, May 2023.

Motohiro Kanai, Hidetoshi Taki, Kyohei Tanimura, and Kousuke Miyaji, “A 15MHz GaN FET AZVT Buck Converter that Achieves 7.2-point Efficiency Increase at Heavy Load,” IEEE Energy Conversion Congress & Exposition (ECCE), 0367 pp. 1–6, October 2022.

Kazuya Nishijima, Toma Umeki, and Kousuke Miyaji, A 24V-to-1V On-Chip Switch Dual-Charging Path Dual-Inductor Hybrid Converter Achieving Improved Load Transient Response,” International Conference on Solid State Devices and Materials (SSDM), pp. 794–795, September 2022.

Tomohiro Higuchi, Dai Suzuki, Ryo Ishida, Yasuaki Isshiki, Kazuki Arai, Kohei Onizuka, and Kousuke Miyaji, “A 5.7GHz RF Wireless Power Transfer Receiver Using 84.5% Efficiency 12V SIDO Buck-Boost DC-DC Converter with Internal Power Supply Mode,” IEEE Asian Solid-State Circuits Conference (A-SSCC), 2.4 pp. 1–3, November 2021.

Motohiro Kanai, Ryuya Maki, Norifumi Matsuda, Kyohei Tanimura, Hidetoshi Taki, and Kousuke Miyaji, “A 24V VIN 5-to-20V VOUT 10MHz 2-Phase GaN DC-DC Buck Converter with CF-AOOT Control for Wide Range Voltage Conversion Ratio,” International Conference on Solid State Devices and Materials (SSDM), pp. 714–715, September 2021.

Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, and Kousuke Miyaji, “A 65nm CMOS Process Li-ion Battery Charging Cascode SIDO Boost Converter with 89% Maximum Efficiency for RF Wireless Power Transfer Receiver,” Asia and South Pacific Design Automation Conference (ASP-DAC) University LSI Design Contest, 2A-1, pp. 91–92, January 2021.

Yasuaki Isshiki, Dai Suzuki, Ryo Ishida, and Kousuke Miyaji, “A 65nm CMOS Process 4.2V Battery Charging Cascode SIDO Boost Converter with 87% Maximum Efficiency for RF Wireless Power Transfer Receiver,” International Conference on Solid State Devices and Materials (SSDM), pp. 535–536, September 2019.

Takanobu Fukuoka, Yuki Karasawa, Tomoki Akiyama, Ryoutaro Oka, Shu Ishida, Tomohiro Shirasawa, Makoto Sonehara, Toshiro Sato, and Kousuke Miyaji, “An 86% Efficiency, 20MHz, 3D-Integrated Buck Converter with Magnetic Core Inductor Embedded in Interposer Fabricated by Epoxy/Magnetic-Filler Composite,” IEEE Applied Power Electronics Conference and Exposition (APEC), pp. 1561–1566, March 2019.

Kousuke Miyaji, Yuki Karasawa, and Takanobu Fukuoka, “A Wide Conversion Ratio, 92.8% Efficiency, 3-Level Buck Converter with Adaptive On/Off-Time Control and Shared Charge Pump Intermediate Voltage Regulator,” Asia and South Pacific Design Automation Conference (ASP-DAC) University LSI Design Contest, 1A-1 pp. 1–2, January 2019.

Tera Sakata, Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hidetoshi Taki, Hideya Momose, and Koh Johguchi, “A CMOS Integrated Sweat Monitoring System for Medical Applications,” International Symposium on Devices, Circuits (ISDCS), 9-2, March 2019.

Yuki Karasawa, Takanobu Fukuoka, and Kousuke Miyaji, “A 92.8% Efficiency Adaptive-On/Off-Time Control 3-Level Buck Converter for Wide Conversion Ratio with Shared Charge Pump Intermediate Voltage Regulator,” IEEE Symposium on VLSI Circuits, pp. 227–228, June 2018.

Yuki Karasawa, Yusuke Gotou, Shintaro Hara, Takanobu Fukuoka, and Kousuke Miyaji, “Comparisons of Wire Bonding and Flip-Chip Bonding Assembly in High Frequency Hysteretic DC-DC Buck Converters,” International Conference on Solid State Devices and Materials (SSDM), pp. 513–514, September 2017.
Minori Yoshida, and Kousuke Miyaji, “A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Technique in 0.18um Standard CMOS Process for Energy Harvesting,” International Conference on Solid State Devices and Materials (SSDM), pp. 509–510, September 2017.

Takaharu Uekura, Kousuke Oyanagi, Makoto Sonehara, Toshiro Sato, and Kousuke Miyaji, “A 120dBohm 16MHz Pseudo Differential CMOS Analog Front End Circuit for Optical Probe Current Sensor,” International Conference on Solid State Devices and Materials (SSDM), pp. 351–352, September 2017.

Yusuke Mitani, Kousuke Miyaji, Satoshi Kaneko, Takaharu Uekura, Hideya Momose, and Koh Johguchi, “A Compact Sweat Monitoring System with CMOS Capacitive Humidity Sensor for Wearable Health-Care Application,” International Conference on Solid State Devices and Materials (SSDM), pp. 261–262, September 2017.

Kousuke Miyaji, and Hideki Shinohara, "A ZVS Active Diode Rectifier for Wireless Power Transmission Using Voltage-Time-Conversion DLL (Invited)," IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), TH 1A 10, September 2017.

Keita Yogosawa, Hideki Shinohara, and Kousuke Miyaji, “A 13.56MHz CMOS Active Diode Full-Wave Rectifier Achieving ZVS with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission,” Asia and South Pacific Design Automation Conference (ASP-DAC) University LSI Design Contest, pp. 28–29, January 2017.

Hideki Shinohara, and Kousuke Miyaji, “A ZVS CMOS Active Diode Rectifier with Voltage-Time-Conversion Delay-Locked Loop for Wireless Power Transmission,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 15-3 1–4, November 2015.

Toshihiro Tomita, and Kousuke Miyaji, “Effects of Cell Vth State and Number of Traps on Statistical Distribution of Random Telegraph Noise in Scaled NAND Flash Memory,” International Conference on Solid State Devices and Materials (SSDM), pp. 1188–1189, September 2015.

Toshihiro Tomita, and Kousuke Miyaji, “Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory,” International Conference on Solid State Devices and Materials (SSDM), pp. 462–463, September 2014.

Shogo Hachiya, Koh Johguchi, Kousuke Miyaji, and Ken Takeuchi, “TLC/MLC NAND Flash Mix-and-Match Design with Exchangeable Storage Array,” International Conference on Solid State Devices and Materials (SSDM), pp. 894–895, September 2013.
(27) ※Kousuke Miyaji, Chao Sun, and Ken Takeuchi, “Co-Design of Application Software and NAND Flash Memory for Database Storage System,” International Conference on Solid State Devices and Materials (SSDM), pp. 130–131, September 2013.

Koh Johguchi, Toru Egami, Kousuke Miyaji, and Ken Takeuchi, “Write Voltage and Read Reference Current Generator for Multi-Level Ge2Sb2Te5-based Phase Change Memories with Temperature Characteristics Tracking,” IEEE International Memory Workshop (IMW), pp. 104–107, May 2013.

Chao Sun, Kousuke Miyaji, Koh Johguchi, and Ken Takeuchi, “SCM capacity and NAND over-provisioning requirements for SCM/NAND flash hybrid enterprise SSD,” IEEE International Memory Workshop (IMW), pp. 64–67, May 2013.

Kousuke Miyaji, Daisuke Kobayashi, Shinji Miyano, and Ken Takeuchi, “Analysis on Static Noise Margin Improvement in 40nm 6T-SRAM with Post-Process Local Electron Injected Asymmetric Pass Gate Transistor,” IEEE International Reliability Physics Symposium (IRPS), pp. 3B.6.1–3B.6.5, April 2013.

Chao Sun, Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, and Ken Takeuchi, “Over 10-times High-speed, Energy Efficient 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSD by Intelligent Data Fragmentation Suppression,” Asia and South Pacific Design Automation Conferenece (ASP-DAC) University LSI Design Contest, pp. 81–82, January 2013.

Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, and Ken Takeuchi, “An Integrated Variable Positive/Negative Temperature Coefficient Read Reference Generator for MLC PCM/NAND Hybrid 3D SSD,” IEEE Asian Solid-State Circuits Conference (A-SSCC), pp. 313–316, November 2012.

Hiroki Fujii, Kousuke Miyaji, Koh Johguchi, Kazuhide Higuchi, Chao Sun, and Ken Takeuchi, “x11 Performance Increase, x6.9 Endurance Enhancement, 93% Energy Reduction of 3D TSV-Integrated Hybrid ReRAM/MLC NAND SSDs by Data Fragmentation Suppression,” IEEE Symposium on VLSI Circuits, pp. 134–135, June 2012.

Yuki Yanagihara, Kousuke Miyaji, and Ken Takeuchi, “Control Gate Length, Spacing and Stacked Layer Number Design for 3D-Stackable NAND Flash Memory,” IEEE International Memory Workshop (IMW), pp. 84–87, May 2012.

Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, and Ken Takeuchi, "A 6T-SRAM with a Carrier Injection Scheme to Pinpoint and Repair Fails that Achieves 57% Faster Read and 31% Lower Read Energy," IEEE International Solid-State Circuits Conference (ISSCC), pp. 232–233, February 2012.

Kousuke Miyaji, Chinglin Hung, and Ken Takeuchi, "Pushing Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage from 13nm to 8nm with SOI NAND Flash Memory Cells," International Conference on Solid State Devices and Materials (SSDM), pp. 128–129, September 2011.

Yasuhiro Shinozuka, Kousuke Miyaji, and Ken Takeuchi, "A Zero Additional Process to Standard CMOS, 8F2, Scalable Embedded Flash Memory with Drain-side Assisted Erase Scheme," International Conference on Solid State Devices and Materials (SSDM), pp. 981–982, September 2011.

Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi, and Ken Takeuchi, "50nm HfO2 ReRAM with 50-Times Endurance Enhancement by Set/Reset Turnback Pulse & Verify Scheme," International Conference on Solid State Devices and Materials (SSDM), pp. 1011–1012, September 2011.

Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, and Ken Takeuchi, "Statistical VTH Shift Variation Self-Convergence Scheme Using Near Threshold VWL Injection for Local Electron Injected Asymmetric Pass Gate Transistor SRAM," IEEE Custom Integrated Circuits Conference (CICC), No. T9, September 2011.

Kousuke Miyaji, Teruyoshi Hatanaka, Ryoji Yajima, Mitsue Takahashi, Shigeki Sakai, and Ken Takeuchi, "Initialize & Weak-Program Erasing Scheme for Elimination of Cell VTH Shift Variation Due to History Effect in Ferroelectric (Fe)-NAND Flash Memories," Silicon Nanoelectronics Workshop (SNW), pp. 81–82, June 2011.

Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, and Ken Takeuchi, "Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor," IEEE Custom Integrated Circuits Conference (CICC), M–10, September 2010.

Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Shinji Miyano, and Ken Takeuchi, "70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection," IEEE Symposium on VLSI Circuits, pp.41–42, June 2010.

Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai, and Ken Takeuchi, "A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD," IEEE International Memory Workshop (IMW), pp. 42–45, May 2010.

Jiezhi Chen, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, and Toshiro Hiramoto, "Experimental Study of Mobility in [110]- and [100]-Directed Multiple Silicon Nanowire GAA MOSFETs on (100) SOI", Symposium on VLSI Technology, pp. 32–33, June 2008.

Yeon Joo Jeong, Kousuke Miyaji, and Toshiro Hiramoto, "Experimental Study on Silicon Nanowire nMOSFET and Single-Electron Transistor at Room Temperature under Uniaxial Tensile Strain," IEEE Silicon Nanoelectronics Workshop, M0930, June 2008.

Jong Sin Park, Takuya Saraya, Kousuke Miyaji, Ken Shimizu, Akio Higo, Kazuhiro Takahashi, Yuheon Yi, Hiroshi Toshiyoshi, and Toshiro Hiramoto, "Characteristic Modulation of Silicon MOSFETs and Single Electron Transistors with a Movable Gate Electrode," IEEE Silicon Nanoelectronics Workshop, S1015, June 2008.

Sejoon Lee, Kousuke Miyaji, Masaharu Kobayashi, and Toshiro Hiramoto, "Novel Long-Range-Extension of Coulomb Blockade Region in Room-Temperature Operating Silicon Single-Hole Transistor," IEEE Silicon Nanoelectronics Workshop, pp. 115–116, June 2007.

Kousuke Miyaji, and Toshiro Hiramoto, “Room Temperature Demonstration of Variable Full Width at Half Maximum of Coulomb Oscillation in Silicon Single-Hole Transistor,” International Conference on Solid State Devices and Materials (SSDM), pp. 836–837, September 2006.

Masaharu Kobayashi, Kousuke Miyaji, and Toshiro Hiramoto, “Charge Polarity Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Charge Transistors”, International Conference on Solid State Devices and Materials (SSDM), pp. 806–807, September 2006.

Kousuke Miyaji, Masaharu Kobayashi, Tetsu Ohtou, and Toshiro Hiramoto, "On the Accuracy of Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels," International Semiconductor Device Research Symposium (ISDRS), WP7-07-06, December 2005.

Masaharu Kobayashi, Kousuke Miyaji, Masumi Saitoh, and Toshiro Hiramoto, "Large Temperature Dependence of Negative Differential Conductance in Room-Temperature Operating Silicon Single-Electron/Single-Hole Transistor", International Semiconductor Device Research Symposium (ISDRS), TP3-03, December 2005.

Kousuke Miyaji, Masumi Saitoh, and Toshiro Hiramoto, “Very Sharp Room-Temperature Negative Differential Conductance in Silicon Single-Hole Transistor with High Voltage Gain,” International Conference on Solid-State Devices and Materials (SSDM), pp. 166–167, September 2005.

Kousuke Miyaji, Masumi Saitoh, and Toshiro Hiramoto, “Analytical Model for Room-Temperature Operating Silicon Single-Electron Transistors with Discrete Quantum Energy Levels,” IEEE Silicon Nanoelectronics Workshop, pp. 82–83, June 2005.

Kousuke Miyaji, Masumi Saitoh, Toshiharu Nagumo, and Toshiro Hiramoto, "Temperature Dependence of Off-Current in Bulk and FD SOI MOSFETs," International Conference on Solid State Devices and Materials (SSDM), pp. 236–237, September 2004.

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